| Parameters |
| Mfr |
onsemi |
| Series |
- |
| Package |
Bulk |
| Product Status |
Obsolete |
| FET Type |
P-Channel |
| Technology |
MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) |
20 V |
| Current - Continuous Drain (Id) @ 25°C |
1A (Ta) |
| Rds On (Max) @ Id, Vgs |
500mOhm @ 500mA, 4V |
| Vgs(th) (Max) @ Id |
- |
| Gate Charge (Qg) (Max) @ Vgs |
1.5 nC @ 4 V |
| Input Capacitance (Ciss) (Max) @ Vds |
115 pF @ 10 V |
| FET Feature |
Schottky Diode (Isolated) |
| Power Dissipation (Max) |
600mW (Ta) |
| Operating Temperature |
150°C (TJ) |
| Mounting Type |
Surface Mount |
| Supplier Device Package |
6-SCH |
| Package / Case |
6-SMD, Flat Leads |
| RoHS Status |
Not applicable |
| ECCN |
EAR99 |
| HTSUS |
8541.21.0095 |
| Standard Package |
5,000 |
P-Channel 20 V 1A (Ta) 600mW (Ta) Surface Mount 6-SCH