| Parameters |
| Mfr |
onsemi |
| Series |
- |
| Package |
Bulk |
| Product Status |
Active |
| FET Type |
N-Channel |
| Technology |
MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) |
200 V |
| Current - Continuous Drain (Id) @ 25°C |
1A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Rds On (Max) @ Id, Vgs |
1.5Ohm @ 500mA, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs |
9.3 nC @ 10 V |
| Vgs (Max) |
±30V |
| Input Capacitance (Ciss) (Max) @ Vds |
225 pF @ 25 V |
| FET Feature |
- |
| Power Dissipation (Max) |
3.1W (Ta) |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Mounting Type |
Through Hole |
| Supplier Device Package |
TO-92L |
| Package / Case |
TO-226-3, TO-92-3 Long Body |
| Moisture Sensitivity Level (MSL) |
Vendor Undefined |
| REACH Status |
REACH Unaffected |
| Other Names |
2156-IRFNL210BTA-FP001-488 |
| Standard Package |
1,520 |
N-Channel 200 V 1A (Tc) 3.1W (Ta) Through Hole TO-92L