NXP USA Inc. PSMN165-200K518

SMALL SIGNAL N-CHANNEL MOSFET

Manufacturer: NXP USA Inc.
Manufacturer's number: NXP USA Inc. PSMN165-200K518
Package: Bulk
Datasheet: PDF
Stock: 1592
SKU: PSMN165-200K518
Pricing:we created an exceptionally flexible and competitive pricing policy.

Quantity:

Add to Cart

Unit Price: $0.45

Ext Price: $0.45

Details

Parameters
Mfr	NXP USA Inc.
Series	TrenchMOS™
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200 V
Current - Continuous Drain (Id) @ 25°C	2.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	165mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	40 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1330 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	3.5W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-SO
Package / Case	8-SOIC (0.154", 3.90mm Width)
RoHS Status	Not applicable
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	Vendor Undefined
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	40

N-Channel 200 V 2.9A (Tc) 3.5W (Tc) Surface Mount 8-SO