Microchip Technology MSCSM120DAM31CTBL1NG

PM-MOSFET-SIC-SBD-BL1

Manufacturer: Microchip Technology
Manufacturer's number: Microchip Technology MSCSM120DAM31CTBL1NG
Package: Bulk
Datasheet: PDF
Stock: 7
SKU: MSCSM120DAM31CTBL1NG
Pricing:we created an exceptionally flexible and competitive pricing policy.

Quantity:

Add to Cart

Unit Price: $118.9300

Ext Price: $118.9300

Details

Parameters
Mfr	Microchip Technology
Series	-
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	79A
Drive Voltage (Max Rds On, Min Rds On)	20V
Rds On (Max) @ Id, Vgs	31mOhm @ 40A, 20V
Vgs(th) (Max) @ Id	2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	232 nC @ 20 V
Vgs (Max)	+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds	3020 pF @ 1000 V
FET Feature	-
Power Dissipation (Max)	310W
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Chassis Mount
Supplier Device Package	-
Package / Case	Module
Base Product Number	MSCSM120
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	150-MSCSM120DAM31CTBL1NG
Standard Package	1

N-Channel 1200 V 79A 310W Chassis Mount