Fairchild Semiconductor FQI17N08TU

FQI17N08TU

Manufacturer: Fairchild Semiconductor
Manufacturer's number: Fairchild Semiconductor FQI17N08TU
Package: Tube
Datasheet: PDF
Stock: 1
SKU: FQI17N08TU
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Details

Parameters
Mfr	Fairchild Semiconductor
Series	QFET®
Package	Tube
Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80 V
Current - Continuous Drain (Id) @ 25°C	16.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	115mOhm @ 8.25A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	15 nC @ 10 V
Vgs (Max)	±25V
Input Capacitance (Ciss) (Max) @ Vds	450 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	3.13W (Ta), 65W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	I2PAK (TO-262)
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
RoHS Status	ROHS3 Compliant
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	1,000

N-Channel 80 V 16.5A (Tc) 3.13W (Ta), 65W (Tc) Through Hole I2PAK (TO-262)