Fairchild Semiconductor FQE10N20CTU

FQE10N20CTU

Manufacturer: Fairchild Semiconductor
Manufacturer's number: Fairchild Semiconductor FQE10N20CTU
Package: Tube
Datasheet: PDF
Stock: 21
SKU: FQE10N20CTU
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Details

Parameters
Mfr	Fairchild Semiconductor
Series	QFET®
Package	Tube
Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200 V
Current - Continuous Drain (Id) @ 25°C	4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	360mOhm @ 2A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	26 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	510 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	12.8W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-126-3
Package / Case	TO-225AA, TO-126-3
RoHS Status	ROHS3 Compliant
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	1,920

N-Channel 200 V 4A (Tc) 12.8W (Tc) Through Hole TO-126-3