Fairchild Semiconductor FDFME2P823ZT

2.6A, 20V, P-CHANNEL MOSFET

Manufacturer: Fairchild Semiconductor
Manufacturer's number: Fairchild Semiconductor FDFME2P823ZT
Package: Bulk
Datasheet: PDF
Stock: 40
SKU: FDFME2P823ZT
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Details

Parameters
Mfr	Fairchild Semiconductor
Series	PowerTrench®
Package	Bulk
Product Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	2.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 4.5V
Rds On (Max) @ Id, Vgs	142mOhm @ 2.3A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	7.7 nC @ 4.5 V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	405 pF @ 10 V
FET Feature	Schottky Diode (Isolated)
Power Dissipation (Max)	1.4W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	6-MicroFET (1.6x1.6)
Package / Case	6-UFDFN Exposed Pad
Base Product Number	FDFME2
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	0000.00.0000
Standard Package	5,000

P-Channel 20 V 2.6A (Ta) 1.4W (Ta) Surface Mount 6-MicroFET (1.6x1.6)