Infineon Technologies IRFSL23N20D102P

IRFSL23N20D102P

Manufacturer: Infineon Technologies
Manufacturer's number: Infineon Technologies IRFSL23N20D102P
Package: Tube
Datasheet: PDF
Stock: 4080
SKU: IRFSL23N20D102P
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Details

Parameters
Mfr	Infineon Technologies
Series	HEXFET®
Package	Tube
Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200 V
Current - Continuous Drain (Id) @ 25°C	24A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	100mOhm @ 14A, 10V
Vgs(th) (Max) @ Id	5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	86 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	1960 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	3.8W (Ta), 170W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-262
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	50

N-Channel 200 V 24A (Tc) 3.8W (Ta), 170W (Tc) Through Hole TO-262